7MBR25SA120
IGBT Modules
Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Converter Brake Inverter
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
V
CES
V
GES
I
C
I
CP
-I
C
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
V
RRM
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
Continuous Tc=25C
Tc=80C
1ms
Tc=25C
Tc=80C
1 device
Continuous Tc=25C
Tc=80C
1ms
Tc=25C
Tc=80C
1 device
50Hz/60Hz sine wave
Tj=150C, 10ms
half sine wave
AC : 1 minute
1200
20
35
25
70
50
25
180
1200
20
25
15
50
30
110
1200
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
3.5 *
1
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
2
s
C
C
V
Nm
*1
Recommendable value : 2.5 to 3.5 Nm (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT MODULE (S series)
1200V / 25A / PIM
Features
Low V
CE
(sat)
Compact package
P.C. board mount
Converter diode bridge, Dynamic brake circuit
Electrical characteristics (Tj=25C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter
Brake Inverter
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
V
FM
I
RRM
R
B
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=25mA
V
GE
=15V, Ic=25A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=25A
V
GE
=15V
R
G
=51
I
F
=25A chip
terminal
I
F
=25A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=20V
I
C
=15A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=15A
V
GE
=15V
R
G
=82
V
R
=1200V
I
F
=25A chip
terminal
V
R
=1600V
T=25C
T=100C
T=25/50C
1.0
0.2
8.5
2.6
1.2
0.6
1.0
0.3
3.2
0.35
1.0
0.2
2.6
1.2
0.6
1.0
0.3
1.0
1.5
1.0
3000
5.5 7.2
mA
A
V
V
pF
s
V
s
mA
A
V
s
mA
V
mA
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
0.69
1.30
1.14 C/W
0.90
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Modules
7MBR25SA120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
2.1
2.2
0.35
0.25
0.1
0.45
0.08
2.3
2.4
2.1
2.2
0.35
0.25
0.45
0.08
1.1
1.2
5000
465 495 520
3305 3375 3450
[Converter]
21(P)
23(N)
1(R)
2(S)
3(T)
[B ra k e ]
[In v er ter ]
2 2 (P 1 )
7 (B )
1 4 (G b)
2 4 (N 1 )
2 0 (G u)
1 9 (E u )
1 3 (G x)
1 8 (G v)
1 7 (E v )
4 (U )
1 2 (G y)
5 (V )
6 (W )
1 6 (G w )
1 1 (G z)
1 0 (E n )
1 5 (E w )
8
9
[T h e rm is to r]
IGBT Modules
7MBR25SA120
Characteristics (Representative)
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25
o
C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
10
20
30
40
50
60
Tj= 25
o
C
Tj= 125
o
C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25
o
C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
50
100
150
200
250
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25
o
C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
IGBT Modules
7MBR25SA120
Vcc=600V, V
GE
=15V, Rg=51
, Tj=25C
Vcc=600V, V
GE
=15V, Rg=51
, Tj=125C
Vcc=600V, Ic=25A, V
GE
=15V, Tj=25C
Vcc=600V, V
GE
=15V, Rg=51
Vcc=600V, Ic=25A, V
GE
=15V, Tj=125C
+V
GE
=15V, -V
GE
<15V, Rg>51
, Tj<125C
=
=
=
0
10
20
30
40
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
10
20
30
40
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Gate resistance : Rg [
]
Switching time : ton, tr, toff, tf [ nsec ]
0
10
20
30
40
50
0
1
2
3
4
5
6
7
Err(25
o
C)
Eoff(25
o
C)
Eon(25
o
C)
Err(125
o
C)
Eoff(125
o
C)
Eon(125
o
C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [
]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
10
20
30
40
50
60
[ Inverter ]
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
IGBT Modules
7MBR25SA120
0
1
2
3
4
0
10
20
30
40
50
60
Tj=25
o
C
Tj=125
o
C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
10
20
30
40
10
100
300
Irr(125
o
C)
Irr(25
o
C)
trr(25
o
C)
trr(125
o
C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=51
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
60
Tj= 25
o
C
Tj= 125
o
C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forward current : IF [ A ]
0.001
0.01
0.1
1
0.01
0.1
1
5
IGBT[Brake]
Transient thermal resistance
Thermal resistanse : Rth(j-c) [
o
C/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
Conv. Diode
IGBT[Inverter]
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [
o
C ]
Resistance : R [ k
]
IGBT Modules
7MBR25SA120
0
1
2
3
4
5
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25
o
C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
5
10
15
20
25
30
35
Tj= 25
o
C
Tj= 125
o
C
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 7.5A
Ic= 15A
Ic= 30A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25
o
C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
50
100
1000
5000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25
o
C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
50
100
150
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25
o
C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
IGBT Modules
7MBR25SA120
Outline Drawings, mm
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